Schottky device
英
美
网络 肖特基器件
双语例句
- Numerical Modeling of Electric Characteristics of GaN-based Schottky Device; The Properties of GaN Schottky Photodetectors
肖特基型氮化镓紫外光电探测器性能 - Effect of Structure Parameters on the Performances of GaN Schottky Barrier Ultraviolet Photodetectors and Device Design
结构参数对GaN肖特基紫外探测器性能的影响及器件设计 - Investigation of the Grain Boundary Barriers about the Semiconductor Ceramic of Schottky Barrier Mode Device
半导体陶瓷Schottky势垒型器件晶界势垒问题探讨 - The grain boundary barriers about semiconductor ceramics of Schottky barrier mode device in which there are the acceptor-diffused layers have been investigated in this paper.
研究有受主态扩散层的Schottky势垒型半导体陶瓷的晶界势垒。 - To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。 - Transition metal ( TM)-silicon contact systems have received special interest because of their importance in Schottky barrier formation, epitaxial growth, device reliability, refractoriness, etc.
过渡金属与硅的接触系统一直被人们所关注，是因为它们在界面处具有肖特基势垒的形成、过渡金属硅化物的外延生长、制作器件的稳定和耐高温等重要性。 - An analysis of the operation principle of the junction barrier controlled Schottky rectifier is made, and the device characteristics versus structural parameters is discussed in detail.
本文在分析结势垒控制肖特基整流管工作原理的基础上，详细讨论了器件特性与结构参数的关系； - Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. It has the advantages of low turn-on voltage and high response frequency, compared with PN junction diodes.
肖特基二极管是利用金属与半导体之间接触势垒进行工作的一种多数载流子器件，与普通的PN结二极管相比，它具有正向导通电压低，响应速度快等优良特性。 - The sensitive mechanisms of gas sensors with a structure of metal insulator silicon carbide ( MISiC) Schottky diode are analyzed. A physical model for the device is developed by combining thermal electron emission theory with tunnel theory.
分析了金属绝缘体SiC（MISiC）结构肖特基二极管（SBD）气体传感器敏感机理，通过将热电子发射理论与隧道理论结合，建立了器件物理模型。 - While Schottky device is a important kind of Infrared detectors.
而肖特基型器件则是红外探测器的一种重要类型。 - Schottky barrier diode as a majority carrier device with high switching speed has been widely used in power circuit. But, in order to achieve high breakdown voltage, the concentrate of the drift region need to be lower enough, and the specific on-resistance improved a lot.
肖特基势垒二极管作为一种多子器件具有很高的开关速度，但是要做到耐压很高就需要降低漂移区载流子的浓度，从而使正向导通电阻很大。